Heterojunction diodes of soluble conducting polypyrrole with porous silicon

Authors
Citation
Yq. Shen et Mx. Wan, Heterojunction diodes of soluble conducting polypyrrole with porous silicon, SYNTH METAL, 98(2), 1998, pp. 147-152
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
98
Issue
2
Year of publication
1998
Pages
147 - 152
Database
ISI
SICI code
0379-6779(199812)98:2<147:HDOSCP>2.0.ZU;2-Z
Abstract
The heterojunction diodes made between porous silicon (PS) and soluble poly pyrrole (PPy), Au/PPy-PS/Al cell were fabricated. Compared to PS Schottky d iodes, the rectifying characteristics of Au/PPy-PS/Al diodes were significa ntly improved. Moreover, it was found that the rectifying characteristics o f the heterojunction diodes were strongly dependent of the doping degree, d opants and solvents for the doped PPy films. It was also noted that decreas ing oxidation of PS exposed to air is an effective role to improve the rect ifying characteristics of the diodes. (C) 1998 Published by Elsevier Scienc e S.A. All rights reserved.