Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures

Authors
Belyaev, AA Belyaev, AE Ermolovich, IB Komirenko, SM Konakova, RV Lyapin, VG Milenin, VV Solov'ev, EA Shevelev, MV
Citation
Aa. Belyaev et al., Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures, TECH PHYS, 43(12), 1998, pp. 1445-1449
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
43
Issue
12
Year of publication
1998
Pages
1445 - 1449
Database
ISI
SICI code
1063-7842(199812)43:12<1445:IOMTOT>2.0.ZU;2-O
Abstract
An investigation is made of changes in the electrophysical parameters of na rrow-gap (CdxHg1-xTe x = 0.22-0.24) and wide-gap (gallium arsenide, indium and gallium phosphides) semiconductor materials and Schottky-barrier diode structures based on these materials, stimulated by microwave electromagneti c radiation. It is shown that the parameters of materials and device struct ures may be improved by defect gettering. An analysis is made of possible m echanisms for the interaction between microwave radiation and the objects b eing studied. (C) 1998 American Institute of Physics. [S1063-7842(98)00912- X].