Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction i n a conventional buried heterostructure InP-based laser. This technique red uces the number of regrowth steps and eliminates leakage current under high -temperature operation. The InAlAs native oxide buried heterostructure (NOB H) laser with strain-compensated InGaAsP/InP multiple quantum well active l ayers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic tem perature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)0 1352-7].