Growth of highly oriented carbon nanotubes by plasma-enhanced hot filamentchemical vapor deposition

Citation
Zp. Huang et al., Growth of highly oriented carbon nanotubes by plasma-enhanced hot filamentchemical vapor deposition, APPL PHYS L, 73(26), 1998, pp. 3845-3847
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
26
Year of publication
1998
Pages
3845 - 3847
Database
ISI
SICI code
0003-6951(199812)73:26<3845:GOHOCN>2.0.ZU;2-E
Abstract
Highly oriented, multiwalled carbon nanotubes were grown on polished polycr ystalline and single crystal nickel substrates by plasma enhanced hot filam ent chemical vapor deposition at temperatures below 666 degrees C. The carb on nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 mu m in leng th depending on growth conditions. Acetylene is used as the carbon source f or the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and th eir flow rates, etc. affect the diameters and uniformity of the carbon nano tubes. (C) 1998 American Institute of Physics. [S0003-6951(98)01952-4].