Temperature-dependent recombination in polymer composite light-emitting diodes

Citation
L. Bozano et al., Temperature-dependent recombination in polymer composite light-emitting diodes, APPL PHYS L, 73(26), 1998, pp. 3911-3913
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
26
Year of publication
1998
Pages
3911 - 3913
Database
ISI
SICI code
0003-6951(199812)73:26<3911:TRIPCL>2.0.ZU;2-6
Abstract
We study the temperature dependence of the current-voltage and radiance-vol tage curves in double-carrier injected polymer light-emitting devices compr ised of poly(2-methoxy,5-(2'-ethyl-hexoxy)-p-phenylene vinylene) (MEHPPV) a nd MEH-PPV/SiO2 as the active layer. The quantum efficiency increases signi ficantly as the temperature is decreased in agreement with an increase in t he recombination efficiency with decreasing temperature. Moreover, the bimo lecular recombination efficiency saturates at low temperatures and high cur rents to a very high value for both the composite and plain MEH-PPV devices with the nanoparticles serving as charge traps only at moderately low curr ent densities. Finally, we find that the order of magnitude improvement in radiance observed in some polymer/nanoparticle composites is due to an incr ease in the effective electric field across the device. (C) 1998 American I nstitute of Physics. [S0003-6951(98)02952-0].