Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

Authors
Yu, LS Xing, QJ Qiao, D Lau, SS Boutros, KS Redwing, JM
Citation
Ls. Yu et al., Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure, APPL PHYS L, 73(26), 1998, pp. 3917-3919
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
26
Year of publication
1998
Pages
3917 - 3919
Database
ISI
SICI code
0003-6951(199812)73:26<3917:IPMOSB>2.0.ZU;2-U
Abstract
The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared t o a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively. (C) 1998 American Institute of Physics. [000 3-951(98)04552- 5].