Growth of highly oriented Pb(Zr,Ti)O-3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors
Na. Basit et al., Growth of highly oriented Pb(Zr,Ti)O-3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors, APPL PHYS L, 73(26), 1998, pp. 3941-3943
We have grown highly oriented lead zirconate titanate [Pb(Zr, Ti)O-3 or PZT
] films on oxidized silicon substrates using a thin MgO buffer layer (7-70
nm thick). Ferroelectric nonvolatile memory field-effect transistors (FETs)
were successfully fabricated using the metal/PZT/MgO/SiO2/Si structure in
conjunction with radio-frequency sputter deposition of PZT and MgO films. T
he fabricated devices show excellent performance in ferroelectric polarizat
ion switching and memory retention. The results indicate that a thin MgO bu
ffer serves well not only as a template layer for the growth of oriented PZ
T films on amorphous substrates, but also as a diffusion barrier between a
ferroelectric and a substrate during device fabrication, protecting the SiO
2/Si interface and the FET channel region. (C) 1998 American Institute of P
hysics. [S0003-6951(98)03652-3].