We have remeasured the lifetimes of the 3s(2)4s and 3s(2)5s(2)S(1/2) levels
in Si II using beam foil spectroscopic techniques. Measured values for the
lifetimes and oscillator strengths derived from them are presented and com
pared with previous measurements and theoretical calculations. Agreement wi
th recent theoretical calculations is now quite good: for 3s(2)4s it is exc
ellent and for 3s(2)5s it is satisfactory, although the theoretical uncerta
inties in that calculation are still somewhat larger than desired.