The effect of increased valence band offset on the operation of 2 mu m GaInAsSb-AlGaAsSb lasers

Citation
T. Newell et al., The effect of increased valence band offset on the operation of 2 mu m GaInAsSb-AlGaAsSb lasers, IEEE PHOTON, 11(1), 1999, pp. 30-32
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
1
Year of publication
1999
Pages
30 - 32
Database
ISI
SICI code
1041-1135(199901)11:1<30:TEOIVB>2.0.ZU;2-6
Abstract
Two and four quantum-well (QW) GaInAsSb-AlGaAsSb lasers emitting at 2 mu m are reported. In comparison to previously published data, it is found that higher Al content in the QW barrier improves the internal efficiency,satura ted modal gain, and characteristic temperature of the lasers, These results are attributed to an increased valence band offset that provides superior hole confinement in the GaInAsSb QW, A differential efficiency of 74% is ob served at 25 degrees C under pulsed conditions for a 900-mu m cavity length , 2-QW device, and a record characteristic temperature of 140 K is measured for a 4-QW laser.