Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique

Citation
R. Narasimhan et al., Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique, IEEE DEVICE, 46(1), 1999, pp. 24-31
Citations number
23
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
1
Year of publication
1999
Pages
24 - 31
Database
ISI
SICI code
0018-9383(199901)46:1<24:EOHHPO>2.0.ZU;2-F
Abstract
This paper reports the effects of high temperature on high-frequency/high-s peed field effect transistors (FET's), particularly GaAs-based MESFET's and HEMT's, The high-temperature electronic technique (HTETJ) was employed to stabilize and improve the performance of these devices at high temperatures . This work focuses on detailed high-temperature experiments of high-freque ncy scattering parameters of various transistors. Comparable gain level to that obtained at room temperature was achieved at elevated temperature thro ugh the use of the HTET.