R. Narasimhan et al., Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique, IEEE DEVICE, 46(1), 1999, pp. 24-31
This paper reports the effects of high temperature on high-frequency/high-s
peed field effect transistors (FET's), particularly GaAs-based MESFET's and
HEMT's, The high-temperature electronic technique (HTETJ) was employed to
stabilize and improve the performance of these devices at high temperatures
. This work focuses on detailed high-temperature experiments of high-freque
ncy scattering parameters of various transistors. Comparable gain level to
that obtained at room temperature was achieved at elevated temperature thro
ugh the use of the HTET.