Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique

This paper reports the effects of high temperature on high-frequency/high-s peed field effect transistors (FET's), particularly GaAs-based MESFET's and HEMT's, The high-temperature electronic technique (HTETJ) was employed to stabilize and improve the performance of these devices at high temperatures . This work focuses on detailed high-temperature experiments of high-freque ncy scattering parameters of various transistors. Comparable gain level to that obtained at room temperature was achieved at elevated temperature thro ugh the use of the HTET.