The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga(0.8)As doped-channel FET's

The effect of gate recess profile on device performance of Ga0.51In0.49P/In 0.2Ga0.8As doped-channel FET's was studied, In the experiment, Ga0.51In0.49 P/In0.2Ga0.8As doped-channel FET's (DCFET's) using triple-recessed gate str ucture were compared with devices using single-recessed and double-recessed gate structures, It is found that triple-recessed gate approach provides h igher breakdown voltage (35 V) than single-recessed (16 V) and double-reces sed gate (28 V) approaches, This is attributed to the larger aspect ratio i n the triple-recessed gate structure. A unified method to calculate the bre akdown voltages of MESFET's, HEMT's and DCFET's (or MISFET's) of any given arbitrary recessed gate profile was proposed and used to explain the experi mental results.