2.5 kV-1000 a power pack IGBT (high power flat-packaged NPT type RC-IGBT)

A 2.5 kV-1000 A power pack IGBT (flat-packaged reverse conducting IGBT) has been developed using NPT (non-punchthrough) IGBT chip technology, the gate -source repair technology, the parallel connection technology with no oscil lation and the multi-chip assembly technology. The power pack IGBT is speci ally designed for high power and highly reliable industrial and traction ap plications, Compared with conventional IGBT modules, this power pack IGBT h as high reliability by use of a hermetic package and a press contact struct ure. In addition to the high reliability, this power pack IGBT is simple an d compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side coo ling. The power pack IGBT shows the high blocking voltage of 2.5 kV, the ty pical saturation voltage of 4.2 V at the collector current (I-C) of 1000 A, the junction temperature (T-j) of 125 degrees C, and the turnoff capabilit y of over 3 x I-C.