Temperature-dependent kink effect model for partially-depleted SOI NMOS devices

Authors
Lin, SC Kuo, JB
Citation
Sc. Lin et Jb. Kuo, Temperature-dependent kink effect model for partially-depleted SOI NMOS devices, IEEE DEVICE, 46(1), 1999, pp. 254-258
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
1
Year of publication
1999
Pages
254 - 258
Database
ISI
SICI code
0018-9383(199901)46:1<254:TKEMFP>2.0.ZU;2-O
Abstract
This paper reports a closed-form analytical temperature-dependent kink effe ct model for the partially-depleted SOI NMOS devices. Based on the body-emi tter voltage model, an analytical triggering V-DS formula for temperature-d ependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter thin-film doping densi ty, the onset of the kink effect occurs at a larger V-DS.