X-ray diffraction analysis of porous silicon

Authors
Popescu, M Sava, F Lorinczi, A Mihailescu, IN Cojocaru, I Mihailova, G
Citation
M. Popescu et al., X-ray diffraction analysis of porous silicon, J PHYS IV, 8(P5), 1998, pp. 31-37
Citations number
6
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
8
Issue
P5
Year of publication
1998
Pages
31 - 37
Database
ISI
SICI code
1155-4339(199810)8:P5<31:XDAOPS>2.0.ZU;2-Y
Abstract
The modification of the ideal lattice parameter in porous silicon has been determined by X-ray diffraction. A contraction effect has been detected in several samples. There was shown that the position of the photoluminescence band is related to the modification of the lattice parameter. The quantum theory of confinement in wires was used for the interpretation of the exper imental data.