Electrical resistance and mechanical stress in NiCr/Cu/NiCr thin films

Citation
W. Bruckner et S. Baunack, Electrical resistance and mechanical stress in NiCr/Cu/NiCr thin films, J APPL PHYS, 85(2), 1999, pp. 935-940
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
2
Year of publication
1999
Pages
935 - 940
Database
ISI
SICI code
0021-8979(19990115)85:2<935:ERAMSI>2.0.ZU;2-E
Abstract
NiCr/Cu/NiCr film configurations are used for metallization of chip resisto rs. The influence of a heat treatment on the electrical resistance of these films has been investigated ex situ and in situ. This has been correlated with concentration depth profiles determined by Auger electron spectrometry . Up to 450 degrees C only weak interdiffusion has been found, so that dist inct resistance changes occur only for films with small Cu-sublayer thickne sses. The distinction of NiCr/CuNi/NiCr resistor films with characteristic interdiffusion effects is explained on the basis of phase diagram. In compa rison to copper films, the temperature dependence of the effective biaxial stress in the NiCr/Cu/NiCr film configuration shows a reduced stress relaxa tion due to the plastically undeformable NiCr films. (C) 1999 American Inst itute of Physics. [S0021-8979(99)03102-3].