NiCr/Cu/NiCr film configurations are used for metallization of chip resisto
rs. The influence of a heat treatment on the electrical resistance of these
films has been investigated ex situ and in situ. This has been correlated
with concentration depth profiles determined by Auger electron spectrometry
. Up to 450 degrees C only weak interdiffusion has been found, so that dist
inct resistance changes occur only for films with small Cu-sublayer thickne
sses. The distinction of NiCr/CuNi/NiCr resistor films with characteristic
interdiffusion effects is explained on the basis of phase diagram. In compa
rison to copper films, the temperature dependence of the effective biaxial
stress in the NiCr/Cu/NiCr film configuration shows a reduced stress relaxa
tion due to the plastically undeformable NiCr films. (C) 1999 American Inst
itute of Physics. [S0021-8979(99)03102-3].