Near-field coupling effect in normal-incidence absorption of quantum-well infrared photodetectors

Citation
Yy. Fu et al., Near-field coupling effect in normal-incidence absorption of quantum-well infrared photodetectors, J APPL PHYS, 85(2), 1999, pp. 1237-1239
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
2
Year of publication
1999
Pages
1237 - 1239
Database
ISI
SICI code
0021-8979(19990115)85:2<1237:NCEINA>2.0.ZU;2-X
Abstract
Experiments have shown a significant photoresponsivity in quantum well (QW) infrared photodetectors (QWIP) with normal incidence without optical grati ng. Different explanations based on the energy band structures have been gi ven, but no concrete conclusions can be drawn at the present stage. We deve lop a theory based on the optical near-field effect in the QW active region to explain the observed photoresponsivity in the normal incidence conditio n. Our theory indicates that the near-field effect results in an evanescent wave which induces a nonzero electrical component in the optical field alo ng the QWIP growth direction in the quantum well region inducing the observ ed photoresponsivity. (C) 1999 American Institute of Physics. [S0021-8979(9 9)08102-5].