FORM-FACTOR FOR ELECTRON-ELECTRON INTERACTION IN SEMICONDUCTOR HETEROSTRUCTURES

A brief summary of the selfconsistent field method leading to a four-i ndex matrix dielectric function, as the one of the random phase approx imation, for a quasi-two-dimensional electron gas is reminded. General expressions for the form factor concerning electron-electron interact ion in single heterostructures and quantum wells are derived when diff erent dielectric constants on each side of an interface are considered and, besides, the envelope functions in the confinement direction can penetrate into the barrier regions. This problem is tightly connected with numerical calculations for multisubband transport in inversion l ayers and semiconductor heterostructures, as well as for other phenome na in this kind of systems where screening of involved interaction in intersubband scattering must be taken into account.