Magnetic induction and surface segregation in thin-gauged 3% Si steel

Citation
Nh. Heo et al., Magnetic induction and surface segregation in thin-gauged 3% Si steel, J APPL PHYS, 83(11), 1998, pp. 6480-6482
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
83
Issue
11
Year of publication
1998
Part
2
Pages
6480 - 6482
Database
ISI
SICI code
0021-8979(19980601)83:11<6480:MIASSI>2.0.ZU;2-S
Abstract
A correlation between magnetic induction and surface phenomena has been inv estigated in a 3% Si steel 0.1 mm thick. During final annealing at several temperatures, the saturation level in magnetic induction increased with inc reasing final annealing temperature, and reached 1.93 T after final anneali ng at 1300 degrees C for 3.9 ks. This is attributed to the formation of com plete (110)[001] Goss texture. During final annealing, the magnetic inducti on of the thin-gauged 3% Si strip was inversely proportional to the sulfur concentration on the surface. The surface segregation of sulfur occurred af ter a critical time the silicon concentration on the surface dropped to the level obtained from the ct-iron matrix containing 3% Si. The drop in silic on level on the thin-gauged strip surface is due to the volatile silicon mo noxide, which arises from the reaction between the silicon dioxide and the silicon segregated, or between the silicon segregated and the oxygen from t he high vacuum condition. (C) 1998 American Institute of Physics. [S0021-89 79(98)41511-1].