Hysteresis loop areas in kinetic Ising models: Effects of the switching mechanism

Citation
Sw. Sides et al., Hysteresis loop areas in kinetic Ising models: Effects of the switching mechanism, J APPL PHYS, 83(11), 1998, pp. 6494-6496
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
83
Issue
11
Year of publication
1998
Part
2
Pages
6494 - 6496
Database
ISI
SICI code
0021-8979(19980601)83:11<6494:HLAIKI>2.0.ZU;2-I
Abstract
Experiments on ferromagnetic thin films have measured the dependence of the hysteresis loop area on the amplitude and frequency of the external field, A=A (H-0, omega), and approximate agreement with numerical simulations of Ising models has been reported. Here we present numerical and theoretical c alculations of A in the low-frequency regime for two values of H-0, which b racket a temperature and system-size dependent crossover field. Our previou s Monte Carlo studies have shown that the hysteretic response of the kineti c Ising model is qualitatively different for amplitudes above and below thi s crossover field. Using droplet theory, we derive analytic expressions for the low-frequency asymptotic behavior of the hysteresis loop area. In both field regimes, the loop area exhibits an extremely slow approach to an asy mptotic, logarithInic frequency dependence of the form A(proportional to) - [ln(H(0)omega)](-1). Our results are relevant to the interpretation of dat a from experiments and simulations, on the basis of which power-law exponen ts for the hysteresis-loop area have been reported. (C) 1998 American Insti tute of Physics. [S0021-8979(98)23811-4].