Hall effect and magnetic properties of III-V based (Ga1-xMnx)As/AlAs magnetic semiconductor superlattices

Authors
Hayashi, T Tanaka, M Seto, K Nishinaga, T Shimada, H Ando, K
Citation
T. Hayashi et al., Hall effect and magnetic properties of III-V based (Ga1-xMnx)As/AlAs magnetic semiconductor superlattices, J APPL PHYS, 83(11), 1998, pp. 6551-6553
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
83
Issue
11
Year of publication
1998
Part
2
Pages
6551 - 6553
Database
ISI
SICI code
0021-8979(19980601)83:11<6551:HEAMPO>2.0.ZU;2-I
Abstract
We present magnetotransport properties, with emphasis on Hall effect, of a new class of III-V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The S Ls having relatively wide (GaMn)As layers (greater than or equal to 70 Angs trom) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measureme nts. The dependence of the magnetic and transport propel-ties on the GaMnAs well width is discussed. (C) 1998 American Institute of Physics.