Thin films of Sendust (wt. 85% Fe, 10% Si, 5% Al) were deposited by rf diod
e and de magnetron sputtering. The objective was the production of soft mag
netic films without post deposition annealing. Films were deposited on both
glass and Al2O3/TiC(AlTiC) ceramic substrate. Coercivities in the range 45
to 50 Oe for rf diode deposited and 25 to 35 Oe for de magnetron deposited
films were measured. Application of rf bias to the substrate reduced this
further to 7 to 12 Oe together with a reduction in grain size. The value of
magnetic flux at the surface of the sputtering target was controlled by an
electromagnet and found to be an important parameter for the production of
soft magnetic films, low flux densities producing the softest layers, This
may be related to deposition rate and/or the influence of the target magne
tic field penetrating into the substrate region. The softer magnetic layers
produced as a result of applying a low rf bias to the substrate is believe
d to be due to ion bombardment during deposition resulting in smaller grain
size. (C) 1998 American Institute of Physics.