The giant magnetoresistance response of NiMn pinned spin valves was studied
at elevated temperature. Top spin valve films were made by ion beam sputte
ring and thermally treated to induce the strong unidirectional pinning fiel
d in the pinned layer. Both delta R and delta R/R decrease linearly with te
mperature. The sheet resistance of the spin valves also increases linearly
with temperature. The exchange coupling between pinned layer and free layer
decreases slightly and the coercivity of the free layer increases slightly
. The temperature dependence of the exchange pinning field is unique in NiM
n spin valves. The pinning field has a weakly increasing temperature depend
ence up to 200 degrees C, then decreases to zero at the blocking temperatur
e of 380 degrees C. Samples with different thickness NiMn layers show diffe
rent temperature dependencies. However, the blocking temperature is unchang
ed. The pinning fields of NiMn, FeMn, IrMn, and NiO spin valves were also m
easured up to 200 degrees C; NiMn pinned spin valves show the least depende
nce of pinning field at elevated temperatures. (C) 1998 American Institute
of Physics.