Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites

Citation
Jj. Heremans et al., Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites, J APPL PHYS, 83(11), 1998, pp. 7055-7057
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
83
Issue
11
Year of publication
1998
Part
2
Pages
7055 - 7057
Database
ISI
SICI code
0021-8979(19980601)83:11<7055:GBEOTI>2.0.ZU;2-U
Abstract
The transport properties of metalorganic chemical vapor deposited films of lanthanum manganite grown on various substrates are investigated, The more disordered films show a magnetoresistance that is both large and relatively temperature independent over a wide temperature range. At low magnetic fie lds, a linear field dependence is observed and is attributed to spin-polari zed intergrain tunneling. In addition, at low fields a hysteretic dependenc e of resistivity on the magnetic field has been observed. This effect has b een attributed to the scattering of spin-polarized carriers at the grain bo undary. (C) 1998 American Institute of Physics. [S0021-8979(98)18011-8].