In this communication, the variation of the resistance and of the magnetiza
tion with respect to the angle between the applied magnetic field and the s
ubstrate normal is discussed for a Pr0.7Sr0.3MnO3 thin film at 30 K. An ang
ular hysteresis is observed for these properties and this behavior is corre
lated with the magnetic domain wall motion. It is shown that the number of
domain walls is controlled through the rotation of the applied magnetic fie
ld, and that these domain walls play an important part in the colossal magn
etoresistance behavior of these films. Furthermore, a model describing the
reversal of the magnetization with the rotation of the magnetic field has b
een developed. This model enables one to extract the dependence of the resi
stance upon the direction of the magnetization with respect to the crystall
ine axis. (C) 1998 American Institute of Physics.