Effects of heteroepitaxial strain on Laves phases TbFe2 and DyFe2

Authors
Citation
M. Huth et Cp. Flynn, Effects of heteroepitaxial strain on Laves phases TbFe2 and DyFe2, J APPL PHYS, 83(11), 1998, pp. 7261-7263
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
83
Issue
11
Year of publication
1998
Part
2
Pages
7261 - 7263
Database
ISI
SICI code
0021-8979(19980601)83:11<7261:EOHSOL>2.0.ZU;2-A
Abstract
(110) oriented growth was observed for thin films of the highly magnetostri ctive Laves phases TbFe2 and DyFe2 on Ta (110). On Nb (111), TbFe2 nucleate s in the (111) orientation. Depending on the substrate temperature during g rowth, varying degrees of residual tensile strain were observed in the film s. For TbFe2 grown on Ta (110) at 680 degrees C, x-ray diffraction revealed a splitting of the (220) Bragg reflection into a strain free component str ucturally coherent with the template, and a component with 0.5% biaxial ten sile strain at room temperature. This strained component can be attributed to the difference in thermal expansion between the sapphire substrate and t he TbFe2 film. Magnetic hysteresis measurements revealed that the axis of e asy magnetization lies in the film plane for both (110) and (111) oriented samples. (C) 1998 American Institute of Physics. [S0021-8979(98)25411-9].