Trial on-silicon micromagnetoelastic devices

This paper discusses two new kinds of micromagnetoelastic devices made on s ilicon wafer whose function is to control the permeability of magnetostrict ive soft magnetic thin films by voltage-controlled elastic strain. One is p iezoelectric type and the other is electrostatic type. Structure, fabricati on process, characteristics, and maximum possible output are discussed. The feasibility of these devices has been clarified although the fate of obtai ned permeability change was less than 1%. These device characteristics coul d be improved to 11% for piezoelectric type and to 80% for electrostatic ty pe by the optimization of device dimensions and reduction of process damage to the magnetic film. (C) 1998 American Institute of Physics.