In this paper, a new calculation method of the atomic pur divergence used t
o predict the formation of electromigration-induced void is proposed by con
sidering two-dimensional distributions of current density and temperature a
nd also simply considering the line structure of nor only polycrystalline,
but also bamboo line. For the verification, electromigration phenomenon nea
r the corner of an angled polycrystalline line, which results in two-dimens
ional distributions of current density and temperature, is treated as an ex
ample. The usefulness of the proposed method is discussed in the light of t
he comparison of prediction of void formation near the corner with the expe
rimental result.