TIGHT-BINDING CALCULATION OF ELECTRONIC-STRUCTURES OF INNAS ORDERED ALLOYS

The electronic structure of InNxAs1-x ordered alloys (x = 0.25, 0.5 an d 0.75) are calculated based on a semiempirical tight-binding method. The alloy is found to have direct band gaps throughout the entire comp osition range. The band-gap bowing parameter c in E(g) = 0.36 + 1.53x + cx(x - 1) eV of the alloy InNxAs1-x is larger with larger valence-ba nd discontinuity between InAs and InN, and is 4.22 eV if a theoretical value of 3.79 eV given by Harrison's theory is assumed.