Resist dissolution rate and inclined-wall structures in deep x-ray lithography

We investigate the chemical dissolution rate of PMMA resist (polymethylmeth acrylate) in the case of deep x-ray lithography with the aim of intentional ly producing microstructures with inclined side walls. This can be achieved by controlling the dose distributions and their related dissolution rates in both exposed and shaded areas. We specialize in the fabrication of pyram idal microstructures using thin mask absorber patterns. Controlling dissolu tion conditions in the developer bath such as bath temperature or stirring, microstructure aspect ratios are investigated.