ESD protection techniques for high frequency integrated circuits

Citation
G. Croft et J. Bernier, ESD protection techniques for high frequency integrated circuits, MICROEL REL, 38(11), 1998, pp. 1681-1689
Citations number
59
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS AND RELIABILITY
ISSN journal
00262714 → ACNP
Volume
38
Issue
11
Year of publication
1998
Pages
1681 - 1689
Database
ISI
SICI code
0026-2714(199811)38:11<1681:EPTFHF>2.0.ZU;2-B
Abstract
The high frequency performance characteristics of integrated circuits (ICs) can be severely degraded by the addition of electrostatic discharge (ESD) protection networks on input or output pins. However, without protection ne tworks ICs can be extremely sensitive to ESD. This paper will present a rev iew of a number of techniques that have been used to protect ICs without si gnificantly degrading their AC operating performance. Experimental results showing improved ESD performance are included for some of these techniques. Although the emphasis of the paper will be on silicon based circuits, III- V compounds will also be addressed. (C) 1998 Elsevier Science Ltd. All righ ts reserved.