Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs

We have performed a magnetotransport study in both perpendicular and parall el magnetic fields for gated InAs/GaSb double heterostructures. These measu rements provide a further proof for the existence of a minigap at the anti- crossing point between the electron and hole dispersion relations in this s ystem. When a parallel magnetic field is increased from 0 to 12 T, the resi stivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minig ap. (C) 1998 Elsevier Science B.V. All rights reserved.