Photoluminescence from Si/Si1-xGex single quantum wells in high magnetic fields: localized and free exciton recombination

Citation
C. Penn et al., Photoluminescence from Si/Si1-xGex single quantum wells in high magnetic fields: localized and free exciton recombination, PHYSICA B, 258, 1998, pp. 363-366
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
258
Year of publication
1998
Pages
363 - 366
Database
ISI
SICI code
0921-4526(199812)258:<363:PFSSQW>2.0.ZU;2-F
Abstract
We have performed photoluminescence measurements on three Si/Si0.76Ge0.24 S ingle quantum wells with well widths of 2.5, 4.8 and 8.5 nm in magnetic fie lds up to B = 20 T. For the excitation and detection of the photoluminescen ce a large core (0.6 mm) glass fiber was used, which provides sufficient si gnal intensities at moderate excitation power densities. The magnetic field leads to a luminescence peak splitting and rather large diamagnetic shifts in the wider quantum wells. The increase of the diamagnetic shift with wel l width indicates a strong reduction of the exciton binding energy, which i s consistent with the previously proposed type II band alignment in these q uantum wells, and we interpret the peak splitting in terms of localized and free exciton recombination. (C) 1998 Elsevier Science B.V. All rights rese rved.