Far-infrared studies of extremely high mobility gated GaAs/AlGaAs structures in magnetic fields

Authors
Heron, RJ Lewis, RA Clark, RG Starrett, RP Kane, BE Facer, GR Lumpkin, NE Rickel, DG Pfeiffer, LN West, KW
Citation
Rj. Heron et al., Far-infrared studies of extremely high mobility gated GaAs/AlGaAs structures in magnetic fields, PHYSICA B, 258, 1998, pp. 481-485
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
258
Year of publication
1998
Pages
481 - 485
Database
ISI
SICI code
0921-4526(199812)258:<481:FSOEHM>2.0.ZU;2-T
Abstract
Extremely narrow cyclotron resonance linewidths are reported in GaAs-based heterostructures measured using double-modulated far-infrared photoconducti vity. At low carrier densities and temperatures full widths at half maximum as small as 6 mT are observed. (C) 1998 Elsevier Science B.V. All rights r eserved.