The crossover from the quantum Hall regime to the Hall-insulator is investi
gated by varying the strength of the diagonal disorder in a 2d tight-bindin
g model (TBM). The Hall and longitudinal conductivities and the behavior of
the critical states are calculated numerically. We find that with increasi
ng disorder the current carrying states close to the band center disappear
first. Simultaneously, the quantized Hall conductivity drops monotonically
to zero also from higher quantized values. (C) 1998 Elsevier Science B.V. A
ll rights reserved.