Band structure of beta-HgS from Shubnikov-de Haas effect

Citation
K. Dybko et al., Band structure of beta-HgS from Shubnikov-de Haas effect, PHYSICA B, 258, 1998, pp. 629-632
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
258
Year of publication
1998
Pages
629 - 632
Database
ISI
SICI code
0921-4526(199812)258:<629:BSOBFS>2.0.ZU;2-Y
Abstract
The Shubnikov-de Haas oscillations were measured in zinc-blende Hg0.98TM0.0 2S (TM = Co, Mn, Fe) at temperatures ranging from 1.6 to 30 K, in magnetic fields up to 13 T. From standard harmonic analysis the values of the effect ive masses at the Fermi level versus electron concentration were determined . The analysis of this dependence within the frame of Kane model for narrow -band semiconductors yielded a low temperature value for energy gap E-0 = - 0.110 eV +/- 0.040 eV and momentum matrix element P = 7.1 x 10(-8) eV cm +/ - 0.2 x 10(-8) eV cm. (C) 1998 Elsevier Science B.V. All rights reserved.