The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered
in the presence of the hyperfine field. The results obtained are essential
ly equivalent to those without the hyperfine field except for the appropria
te modification of the electronic spin polarisation. Our calculation shows
that it should be possible to observe the contact hyperfine interaction dri
ven AHE in bulk semiconductors. The role of the hyperfine field is to leave
the electronic spin polarisation constant and to enhance the splitting of
the conduction band, thus competing with the applied external magnetic fiel
d in creating the magnetisation of the carriers. As an example, a quantitat
ive calculation for InSb is presented. (C) 1998 Elsevier Science B.V. All r
ights reserved.