Ultrafast heating and switching of a semiconductor optical amplifier usinghalf-cycle terahertz pulses

Citation
S. Hughes et Ds. Citrin, Ultrafast heating and switching of a semiconductor optical amplifier usinghalf-cycle terahertz pulses, PHYS REV B, 58(24), 1998, pp. R15969-R15972
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
24
Year of publication
1998
Pages
R15969 - R15972
Database
ISI
SICI code
0163-1829(199812)58:24<R15969:UHASOA>2.0.ZU;2-X
Abstract
Carrier heating of a semiconductor optical amplifier (SOA) using half-cycle terahertz pulses is investigated. For reasonable parameters, the electron- hole plasma temperature can be increased substantially. The subsequent chan ge in the refractive index and gain profile of the SOA is predicted to be l arge enough to form the basis of a very efficient ultrahigh-speed optical s witch. [S0163-1829(98)50248-2].