Temperature dependence of carrier relaxation in strain-induced quantum dots

We report experimental observation and theoretical interpretation of temper ature-dependent, time-resolved luminescence from strain-induced quantum dot s. The experimental results are well described by a master equation model f or the electrons. The intraband relaxation in the conduction band and the r adiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when on ly a few electrons and holes are confined in a single quantum dot the Auger -like process provides a rapid intraband relaxation channel for electrons t hat can replace the phonon scattering as the dominant relaxation mechanism. [S0163-1829(98)51148-4].