Resonant Raman scattering in a magnetic field assisted by Frohlich interaction in zinc-blende-type semiconductors

The Raman profiles are calculated as a function of magnetic field B-0 and t he laser frequency omega(L) for the Frohlich type of electron-phonon intera ction in parallel scattering configurations with circularly polarized light [(z) over bar(sigma(+/-),sigma(+/-))z] spread in z along the [001] crystal direction. A 4x4 Luttinger Hamiltonian has been used in order to take the valence-band admixture into account. Explicit expressions for the Raman sca ttering efficiency as a function of omega(L), B-0, and the Luttinger parame ters are given. Different effects due to the band nonparabolicity and the m ixing of valence-band states are discussed. For a realistic picture of the resonance profiles an explicit calculation of the lifetime broadening of th e intermediate electronic states assisted by a LO phonon has been carried o ut including the dependence on the laser incident energy, magnetic field, a nd Landau quantum number. Results are applied to explain recent experimenta l data for GaAs. [S0163-1829(98)06948-3].