H-1 tunneling transport in crystalline Si of different doping

H-1 has been implanted into crystalline Si at temperatures of T similar to 40-300 K in order to study its transport properties. At low implantation en ergies a major fraction of H-1 is mobile; the rest remains trapped up to 50 0 K. Ar T>200 K 1H our data complies with the established Arrhenius behavio r with an activation energy of E(a)similar to 0.5 eV and a preexponential f actor of D(0)similar to 10(-2) cm(2)/s; at T<200 K, however, the transport follows a power law of D similar to T-n with n = 5.6 indicative of a tunnel ing mechanism. In this range, diffusion is found to be unaffected by the Fe rmi-level position. Tunneling parameters have been derived and transport pa ths selected. [S0163-1829(98)03848-X].