The diffusion pathways between the trough and the dimer row on the Si(100)
surface are investigated by tight-binding molecular dynamics calculations u
sing the environment-dependent tight-binding silicon potential and by ab in
itio calculations using the Car-Parrinello method. The studies discover a n
ew diffusion pathway consisting of the rotation of the ad-dimer. The calcul
ated energy barrier is in excellent agreement with experiment and is much m
ore energetically favorable than other diffusion pathways by parallel and p
erpendicular ad-dimers.