Thermoelectric power in thin CdTe films

A calculation of the thermoelectric power in polycrystalline CdTe thin film was carried out, considering the participation of heavy (m(p1)), semi-heav y (m(p2)), and light (m(p3)) holes in the electrical transport; it was take n into account that the CdTe exhibits a valence band structure with three b ranches [1]. Furthermore, scattering by grains and optically polarized phon ons were considered. Finally theoretical values of the thermoelectric power are compared with those obtained by experimental means.