Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

The properties of silicon structures with silicon carbide (SiC) buried laye rs produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formati on is also studied. It is shown that in identical implantation and post-imp lantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. T hus, oxygen promotes SiC layer formation as a result of the formation of Si Ox precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous c arbon film on the SiC grain boundaries are also discovered. (C) 1998 Americ an Institute of Physics. [S1063-7826(98)00212- 9].