Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinalGaAs(001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial proces s on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6 degrees are investigated. It is discovered that an increase in the mi sorientation angle leads to a blue shift and a decrease in the full width a t half maximum (FWHM) of the electroluminescence spectrum. This effect is a ttributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The r oom-temperature threshold current density of the lasers with one layer of q uantum dots and the spontaneous luminescence spectrum having the smallest F WHM (54 meV) equals 210 A/cm(2). (C) 1998 American Institute of Physics. [S 1063-7826(98)01312- X].