Empirical pseudopotential band structure of In0.53Ga0.47As and In0.52Al0.48As

Citation
R. Dittrich et W. Schroeder, Empirical pseudopotential band structure of In0.53Ga0.47As and In0.52Al0.48As, SOL ST ELEC, 43(2), 1999, pp. 403-407
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
2
Year of publication
1999
Pages
403 - 407
Database
ISI
SICI code
0038-1101(199902)43:2<403:EPBSOI>2.0.ZU;2-A
Abstract
The electronic band structure of the InP-lattice matched alloys In0.53Ga0.4 7As and In0.52Al0.48As is investigated using a non-local empirical pseudopo tential including spin-orbit interaction. Pseudopotential parameters are ob tained by fitting the virtual crystal band structure immediately to availab le experimental data for the alloys. Results are presented for the band str uctures and effective masses in In0.53Ga0.47As and In0.52Al0.48As. Comparis on of the band structures is made against available results from a quasipar ticle calculation and a model pseudopotential calculation within the cohere nt potential approximation. (C) 1998 Elsevier Science Ltd. All rights reser ved.