Electrical properties of Cr/Si(p) structures

Citation
N. Benouattas et al., Electrical properties of Cr/Si(p) structures, SOL ST ELEC, 43(2), 1999, pp. 439-446
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
2
Year of publication
1999
Pages
439 - 446
Database
ISI
SICI code
0038-1101(199902)43:2<439:EPOCS>2.0.ZU;2-O
Abstract
A chromium layer was evaporated on single-crystal silicon wafers ions impla nted with phosphorus at 40 keV to doses of 5 x 10(14) and 5 x 10(15) atm cm (-2). Interface reaction was followed by Rutherford backscattering spectros copy and X-ray diffraction analysis. In order to investigate the charge car rier transport mechanism across the Cr/Si interface, I-V and C-V characteri stics were measured in Cr/Si samples thermally annealed at 475 degrees C an d 550 degrees C for a variety of time lengths. The degradation of Cr/Si str uctures deviating from Schottky barriers behavior is noted and the p-type c onductivity of CrSi2 was confirmed. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.