Electrical properties of Cr/Si(p) structures

A chromium layer was evaporated on single-crystal silicon wafers ions impla nted with phosphorus at 40 keV to doses of 5 x 10(14) and 5 x 10(15) atm cm (-2). Interface reaction was followed by Rutherford backscattering spectros copy and X-ray diffraction analysis. In order to investigate the charge car rier transport mechanism across the Cr/Si interface, I-V and C-V characteri stics were measured in Cr/Si samples thermally annealed at 475 degrees C an d 550 degrees C for a variety of time lengths. The degradation of Cr/Si str uctures deviating from Schottky barriers behavior is noted and the p-type c onductivity of CrSi2 was confirmed. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.