Citation
J. Song et Js. Yuan, Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs, SOL ST ELEC, 43(2), 1999, pp. 457-461
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101
→ ACNP
Volume
43
Issue
2
Year of publication
1999
Pages
457 - 461
Database
ISI
SICI code
0038-1101(199902)43:2<457:MTBHBE>2.0.ZU;2-T
Abstract
The conduction band barrier effect at high collector current densities of t
he SiGe heterojunction bipolar transistor has been modeled. The effects of
conduction band discontinuity on the collector current and collector-base h
eterojunction capacitance are examined. The analytical results are compared
with experimental data. Good agreement between the model predictions and e
xperiment is obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.