Lateral force microscopy investigations of the crystallization of SrBi2Ta2O9 thin films

Authors
Citation
Kb. Lee et Bk. Ju, Lateral force microscopy investigations of the crystallization of SrBi2Ta2O9 thin films, THIN SOL FI, 334(1-2), 1998, pp. 65-70
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
334
Issue
1-2
Year of publication
1998
Pages
65 - 70
Database
ISI
SICI code
0040-6090(199812)334:1-2<65:LFMIOT>2.0.ZU;2-6
Abstract
A lateral force microscope (LFM) was used for studying the surface morpholo gies of SrBi2Ta2O9 thin films with varying post-annealing temperature. Spec imens were prepared onto platinized silicon wafers by the sol-gel method an d post-annealed at 600-800 degrees C. Non-ferroelectric matrix phases were found for specimens annealed below 700 degrees C, which were confirmed by t he measurement of X-ray diffraction (XRD) patterns. The friction coefficien ts between the surface of ferroelectric grain and non-ferroelectric matrix, and the silicon nitride tip, were determined from the line profile of the LFM images. The measured coefficients of friction for a tip on grain and ma trix are 0.19 +/- 0.08 and 0.28 +/- 0.08, respectively. In the LFM images, the matrix phases decreased with increasing post-anneal temperature and the surfaces of the specimens annealed above 700 degrees C were filled with SE T grains which were consistent with the XRD results. Ferroelectricities of these specimens were confirmed by the measurement of polarization held hyst eresis loops. (C) 1998 Elsevier Science S.A. All rights reserved.