Growth and characterization of diamond films deposited by dc discharge assisted hot filament chemical vapor deposition

Authors
Cui, JB Shang, NG Liao, Y Li, JQ Fang, RC
Citation
Jb. Cui et al., Growth and characterization of diamond films deposited by dc discharge assisted hot filament chemical vapor deposition, THIN SOL FI, 334(1-2), 1998, pp. 156-160
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
334
Issue
1-2
Year of publication
1998
Pages
156 - 160
Database
ISI
SICI code
0040-6090(199812)334:1-2<156:GACODF>2.0.ZU;2-L
Abstract
Diamond films have been deposited by d.c. discharge assisted hot filament c hemical vapor deposition. The diamond nucleation density was significantly enhanced more than five orders of magnitude by this d.c. discharge assisted process. The effects of deposition parameters including deposition time, t emperature, and discharge current on the diamond growth and gas phase compo sition were studied by Raman scattering, scanning electron microscopy, and optical emission spectroscopy. The mechanisms of the discharge enhanced nuc leation of diamond are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.