Comparison of TiN deposition by rf magnetron sputtering and electron beam sustained arc ion plating

TiN films were deposited both by electron beam (EB) sustained Ti are ion pl ating and by reactive magnetron sputtering in nitrogen atmosphere. Although the optical emission measurement revealed totally different features of th e excited species in the two discharges, stoichiometric TiN films were obta ined by both techniques. Different mechanisms of film formation in the two methods were proposed. The crystal structures of the deposited films were c orrelated with the experimental conditions. XPS analysis indicated that the difference of electrical resistivity in the samples prepared by the two te chniques was the result of the difference in the bonding states of Ti in th e films. (C) 1998 Published by Elsevier Science S.A. All rights reserved.